IRFB4321PBF
IRFB4321PBF is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With low gate drive requirements
- Improved diode recovery improves switching
- Easy to drive
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS VGSS
ID IDM
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous@TC=25℃
TC=100℃ Drain Current-Single Pulsed
±30 85 60
Total Dissipation
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.43 62.5
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
