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IRFB4321PBF - Power MOSFET

Key Features

  • 50A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 IRRM - (A) 2000 1600 1200 800 400 0 IF = 33A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 10 0 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt 3200 2800 2400 Fig. 19 - Typical Stored Charge vs. dif/dt QRR - (nC) 2000 1600 1200 800 400 0 IF = 50A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) 6 Fig. 2.

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www.DataSheet4U.com PD - 97103 IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max.