TIP3055 - NPN Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type TIP2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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Datasheet Details

Part number	TIP3055
Manufacturer	Inchange Semiconductor
File Size	213.44 KB
Description	NPN Transistor
Datasheet	TIP3055 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
TIP3055F	NPN Transistor
TIP30	PNP Transistor
TIP30A	PNP Transistor
TIP30B	PNP Transistor
TIP30C	PNP Transistor

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.