Datasheet Summary
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
- Features
- Drain Current
- ID=57A@ TC=25℃
- Drain Source Voltage-
: VDSS= 100V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based on half bridge.
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