| Part Number | IRF3710 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF3710
·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(M.
*Drain Current *ID=57A@ TC=25℃ *Drain Source Voltage- : VDSS= 100V(Min) *Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Designed for high effciency switch mode power supplies, Power factor corr. |
IRF3710 Datasheet
The IRF3710 is a N-Channel MOSFET Transistor.
| Part Number | IRF3710 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
C = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction . |
| Part Number | IRF3710 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed . RDS(ON) = 0.023Ω @ VGS = 10V Ultra low gate charge(130nC max.) Low reverse transfer capacitance (CRSS = 72pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(. |