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IRF3710 Datasheet PDF

Nell Power Semiconductor IRF3710

The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.
Part No. IRF3710
Datasheet IRF3710 Download
Manufacturer
Nell Power Semiconductor
Description N-Channel Power MOSFET
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IRF3710 datasheet page 1 preview

DESCRIPTION

Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. D GDS TO-220AB (IRF3710A) D (Drain)

FEATURES

RDS(ON) = 0.023Ω @ VGS = 10V Ultra low gate charge(130nC max.) Low reverse transfer capacitance (CRSS = 72pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 57 100 0.023 @ VGS = 10V 130

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR VGS ID IDM Drain to Source voltage(Note 1) Drain to Gate voltage Gate to Source voltage Continuous Dra...
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