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15N65 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor ·.

General Description

·Switch regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 250 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N65 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS;

Key Features

  • Drain Current ID= 15A@ TC=25℃.
  • Drain Source Voltage : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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