15N65 Datasheet | Specifications & PDF Download

N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson（Vgs=10V） 0.6 Ω Qg 36 nC Package    LED APPLICATIONS  Hig

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP15N65C3 VCES = 650V IC110 = 1

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :

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UNISONIC TECHNOLOGIES CO., LTD 15N65-MT Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N65-MT is an N-channel mode power MOSF

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GPT15N65 / GPT15N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enha

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UNISONIC TECHNOLOGIES CO., LTD 15N65 15A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanc

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HMS15N65D, HMS15N65, HMS15N65F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technol

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DTP15N6SJ/DTP15N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) max. at 25 °

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat)  2

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SEMICONDUCTOR TECHNICAL DATA KPS15N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characterist

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switchi

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Preliminary Data Sheet ICE15N65 ICE15N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H

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SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1

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STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet — pr

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AIKB15N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft an

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switchi

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Preliminary Data Sheet ICE15N65FP ICE15N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability

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BRF15N65 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ， Crss，，100％， dv/

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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