UNISONIC TECHNOLOGIES CO., LTD 15N65 15A, 650V N-C.
15N65C3 - Power Transistor
SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1.JCS15N65FH - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson(Vgs=10V) 0.6 Ω Qg 36 nC Package LED APPLICATIONS Hig.15N65 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.15N65K-MT - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N65K-MT 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65K-MT is an N-channel mode power MOSFET using UTC’.ICE15N65FP - N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet ICE15N65FP ICE15N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.STF15N65M5 - N-channel Power MOSFET
STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet — pr.WML15N65VD - Super Junction Power MOSFET
WML15N65VD, WMK15N65VD, WMM15N65VD WMN15N65VD, WMP15N65VD, WMO15N65VD 650V 0.45Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new hig.IKA15N65ET6 - IGBT
IKA15N65ET6 TRENCHSTOP™ IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode Features and Benefits: .DTP15N65SJ - N-Channel Super Junction Power MOSFET
DTP15N6SJ/DTP15N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) max. at 25 °.IKP15N65H5 - IGBT
IGBT High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft antiparallel diode IKP15N65H5 650V DuoPack IGBT and Diode High .FDPF15N65 - N-Channel MOSFET
FDP15N65 / FDPF15N65 650V N-Channel MOSFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate ch.FDA15N65 - N-Channel MOSFET
FDA15N65 650V N-Channel MOSFET UniFET FDA15N65 650V N-Channel MOSFET Features • 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.STD15N65M5 - N-channel Power MOSFET
STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features Ord.JCS15N65H - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson(Vgs=10V) 0.6 Ω Qg 36 nC Package LED APPLICATIONS Hig.ICE15N65 - N-Channel MOSFET
ICE15N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.ICE15N65FP - N-Channel MOSFET
ICE15N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.STP15N65M5 - N-channel Power MOSFET
STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet — pr.IGB15N65S5 - IGBT
IGB15N65S5 High speed switching series fifth generation TRENCHSTOPTM 5 high speed soft switching IGBT Features and Benefits: High speed S5 technol.SPI15N65C3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .STB15N65M5-2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor STB15N65M5-2 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source .