STMicroelectronics STF15N65M5
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.FEATURES
Order codes STF15N65M5 STFI15N65M5 STP15N65M5 VDS @ TJmax RDS(on) max ID 710 V < 0.34 Ω 11 A● Worldwide best RDS(on) * area
● Higher VDSS rating and high dv/dt capability
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. 3 2 1 TO-220FP TAB 1 23 I2PAKFP 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Table 1. Device summary Order codes STF15N65M5 STFI15N65M5 STP15N65M5 Marking 15N65M5 Package TO-220FP I2PAKFP TO-220 Packaging Tube November 2012 This is information on a product in full production. Doc ID 022863 Rev 2 1/17 17 Contents Contents STF15N65M5, STFI15N65M5, STP15N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .