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STF15N65M5 - N-Channel MOSFET

Datasheet Summary

Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Features

  • Drain Current.
  • ID= 11A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 340mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STF15N65M5

Datasheet Details

Part number STF15N65M5
Manufacturer INCHANGE
File Size 261.49 KB
Description N-Channel MOSFET
Datasheet download datasheet STF15N65M5 Datasheet
Additional preview pages of the STF15N65M5 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor STF15N65M5 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 340mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
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