Drain Current ID= 16A@ TC=25℃
Static Drain-Source On-Resistance
: RDS(on) = 100mΩ(Max)
Fast Switching Speed
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
high packing density for low on-resistance，rugged avalanche
chara
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N-Channel MOSFET Transistor
STP16NF06，ISTP16NF06
·DESCRIPTION ·Drain Current ID= 16A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 100mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPLICATIONS
·high packing density for low on-resistance，rugged avalanche
characteristics and less critical alignment steps therefore remarkable manufacturing reproducibility
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
16
ID
A
Drain Current-continuous@ TC=100℃
11
ID(puls)
Pulse Drain Current
64
A
Ptot
Total Dissipation@TC=25℃
45
W
Tj
Max.
16NF06 Datasheet
