Datasheet Details
| Part number | 2N3196 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 167.84 KB |
| Description | PNP Transistor |
| Datasheet | 2N3196-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N3196 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 167.84 KB |
| Description | PNP Transistor |
| Datasheet | 2N3196-INCHANGE.pdf |
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·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3196 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -3A;
VCE=-0.6V ICEO Collector Cutoff Current VCE= -60V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N3196 | Silicon PNP Power Transistors | SavantIC |
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