isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=-100mA
ICBO
Collector-Base Cutoff Current
VCB=- 80V
ICEO
Collector-Emitter Cutoff Current
VCE= -60V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A
VBE(on)
Base-Emitter On Voltage
IC=-0.25A; VCE= -1V
hFE-1
DC Current Gain
IC=-100mA; VCE=-1V
hFE-2
DC Current Gain
IC=-250mA; VCE= -1V
hFE-3
DC Current Gain
IC=-500mA; VCE= -1V
hFE-4
DC Current Gain
IC=-1A; VCE= -1V
2N3741A
MIN TYP. MAX UNIT
-80
V
-0.1 uA
-1
uA
-0.6
V
-1
V
40
30
100
20
10
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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