Datasheet Details
| Part number | 2N3741A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.51 KB |
| Description | Silicon PNP Power Transistor |
| Download |
2N3741A Download (PDF)
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| Part number | 2N3741A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.51 KB |
| Description | Silicon PNP Power Transistor |
| Download |
2N3741A Download (PDF)
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|
|
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·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 25 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N3741A isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-100mA ICBO Collector-Base Cutoff Current VCB=- 80V ICEO Collector-Emitter Cutoff Current VCE= -60V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB=-0.125A VBE(on) Base-Emitter On Voltage IC=-0.25A;
VCE= -1V hFE-1 DC Current Gain IC=-100mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N3741A | Medium Power PNP Transistors | Microsemi Corporation |
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2N3741A | PNP SILICON POWER TRANSISTORS | Central Semiconductor Corp |
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2N3741A | MEDIUM-POWER PNP TRANSISTORS | Motorola |
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2N3741 | PNP Power Silicon Transistor | VPT |
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2N3741 | Medium Power PNP Transistors | Microsemi Corporation |
| Part Number | Description |
|---|---|
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