2N3741A Datasheet | Microsemi

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: - - - 2N3741A Drivers Switches Medium-Power Amplifiers Features : - - - - - Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: h FE @ IC = 250 m A: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 n A (Max) 2N3741A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in mercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long...