2N3741A Overview
Key Specifications
Package: TO-66
Mount Type: Through Hole
Max Operating Temp: 200 °C
Min Operating Temp: -65 °C
Description
The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3741 2N3740A 2N3741A 60 80 60 80 7.0 4.0 10 2.0 25 -65 to +200 UNITS V V V A A A W °C SYMBOL TEST CONDITIONS MIN ICEV ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740) ICEV ICEV ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO ICEO ICEO VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO IEBO IEBO VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N3741) VEB=7.0V (2N3740A, 2N3741A) BVCEO IC=100mA (2N3740, 2N3740A) 60 BVCEO IC=100mA (2N3741, 2N3741A) 80 VCE(SAT) IC=1.0A, IB=125mA VBE(ON) VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=100mA 40 hFE VCE=1.0V, IC=250mA 30 hFE VCE=1.0V, IC=500mA 20 hFE VCE=1.0V, IC=1.0A 10 hfe VCE=10V, IC=50mA, f=1.0kHz 25 fT VCE=10V, IC=100mA, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz MAX 100 100 1.0 0.5 1.0 0.5 100 100 1.0 1.0 1.0 1.0 0.5 100 0.6 1.0 200 UNITS μA nA mA mA mA mA μA nA mA μA mA μA mA nA V V V V MHz 100 pF R2 (2-September 2014) 2N3740 2N3740A 2N3741 2N3741A SILICON PNP POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w.
