The 2N3741A is a PNP SILICON POWER TRANSISTORS.
| Package | TO-66 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 200 °C |
| Min Operating Temp | -65 °C |
| Part Number | 2N3741A Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARK. , TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO ICEO ICEO VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO IEBO IEBO VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N. |
| Part Number | 2N3741A Datasheet |
|---|---|
| Description | Medium Power PNP Transistors |
| Manufacturer | Microsemi |
| Overview |
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura.
* * * * * Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3741A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED. |
| Part Number | 2N3741A Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS. ge IC= -1A; IB=-0.125A VBE(on) Base-Emitter On Voltage IC=-0.25A; VCE= -1V hFE-1 DC Current Gain IC=-100mA; VCE=-1V hFE-2 DC Current Gain IC=-250mA; VCE= -1V hFE-3 DC Current Gain IC=-500mA; VCE= -1V hFE-4 DC Current Gain IC=-1A; VCE= -1V 2N3741A MIN TYP. MAX UNIT -80 V -0.1 uA . |
| Part Number | 2N3741A Datasheet |
|---|---|
| Description | MEDIUM-POWER PNP TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N3740, A(SILICON) 2N3741, A
MEDIUM-POWER PNP TRANSISTORS
· .. ideal for use as drivers, switches and direct replacement of germanium medium·power devices. These devices feature:
• Low Saturation Vol.
* Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp * High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc * Direct Substitution for Germanium Equivalents * Excellent Safe Area Limits (See Figure 2) * Low Collector Cutoff Current - 100 nA (Max) 2N3740A, 2N3741A * Complementary to NPN 2N3. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2N3741 | Microsemi | Medium Power PNP Transistors |
| 2N3741 | Central Semiconductor | PNP SILICON POWER TRANSISTORS |
| 2N3741 | Motorola Semiconductor | MEDIUM-POWER PNP TRANSISTORS |
| 2N3741R | Inchange Semiconductor | Silicon PNP Power Transistors |
| 2N3741 | Seme LAB | Bipolar PNP Device |
| 2N3741 | Aeroflex | PNP Power Silicon Transistor |
| 2N3741 | VPT Components | PNP Power Silicon Transistor |