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2N3741R - Silicon PNP Power Transistors

General Description

DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A High Gain Low Saturation Voltage APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purp

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INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R DESCRIPTION ·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.