Datasheet Details
| Part number | 2N4347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.42 KB |
| Description | NPN Transistor |
| Datasheet | 2N4347-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.42 KB |
| Description | NPN Transistor |
| Datasheet | 2N4347-INCHANGE.pdf |
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 140 V 120 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 100 W Junction Temperature -65~200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W 2N4347 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA;
IB= 0 ICEO Collector Cutoff Current VCE=100V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4347 | High Power Industrial Transistors | Comset Semiconductor |
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