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2N4347 Datasheet

The 2N4347 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2N4347
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 ICEO Collector Cutoff Current VCE=100V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VCE(sat)-2* Collector-Emitter S.
Part Number2N4347
DescriptionHigh Power Industrial Transistors
ManufacturerComset Semiconductor
Overview NPN 2N3442 – 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors in Jedec TO-39 metal case. They are designed for applictions in industrial and commercial equipment including high fidelit. S Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3442
  – 2N4347 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO Ratings Collector-Emitter Sustaining Voltage (.