Datasheet Details
| Part number | 2N5038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.97 KB |
| Description | NPN Transistor |
| Download | 2N5038 Download (PDF) |
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| Part number | 2N5038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.97 KB |
| Description | NPN Transistor |
| Download | 2N5038 Download (PDF) |
|
|
|
·High Speed-tf= 0.5μs (Max) ·Low Saturation Voltage- VCE(sat)≤2.5V@ IC= 20A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation.
APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 150 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 140 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5038 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5038.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5038 | NPN Silicon Transistors | ON Semiconductor |
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2N5038 | HIGH CURRENT NPN SILICON TRANSISTOR | STMicroelectronics |
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2N5038 | NPN Transistor | Multicomp |
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2N5038 | Bipolar NPN Device | Seme LAB |
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2N5038 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi |
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