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2N5202 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min) ·High saturation voltage ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 50 V VCER(SUS) Collector-Emitter Voltage RBE= 50Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 2 A PD Total Power Dissipation@TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~235 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 2N5202 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA;

IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA;

Overview

isc Silicon NPN Power Transistor.

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