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2N5202 Datasheet Preview

2N5202 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min)
·High saturation voltage
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-current, high-speed switching
circuits such as:low-distortion power amplifiers,oscillators,
switching regulators, series regulators, converters, and
inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO(SUS) Collector-Emitter Voltage
50
V
VCER(SUS) Collector-Emitter Voltage RBE= 50Ω
75
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
2
A
PD
Total Power Dissipation@TC=25
35
W
TJ
Junction Temperature
-65~200
Tstg
Storage Temperature
-65~235
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
/W
2N5202
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N5202 Datasheet Preview

2N5202 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICEO
Collector Cutoff Current
VCE= 70V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE1
DC Current Gain
IC= 0.5A; VCE= 10V
hFE2
DC Current Gain
IC= 4A; VCE= 1.2V
2N5202
MIN MAX UNIT
50
V
75
V
1.2
V
2.0
V
10
mA
10
mA
6
10
100
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N5202
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2N5202 Datasheet PDF





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