Datasheet Details
| Part number | 2N5345 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.33 KB |
| Description | PNP Transistor |
| Datasheet |
 2N5345 Datasheet
|
|
|
| Part number | 2N5345 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.33 KB |
| Description | PNP Transistor |
| Datasheet |
2N5345 Datasheet
|
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -280V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product- : fT= 60MHz(Min)@ IC= -0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -280 V VCEO Collector-Emitter Voltage -280 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.0 A IB Base Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.38 ℃/W 2N5345 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N5345 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2N5345 | High voltage power PNP silicon transistors | ETC |
 |
2N5345A | Bipolar PNP Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N5302 | NPN Transistor |
| 2N5038 | NPN Transistor |
| 2N5108 | Silicon NPN Power Transistor |
| 2N5109 | NPN Transistor |
| 2N5202 | NPN Transistor |
| 2N5297 | NPN Transistor |
| 2N5466 | NPN Transistor |
| 2N5467 | NPN Transistor |
| 2N5468 | NPN Transistor |
| 2N5469 | NPN Transistor |