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2N5345 Datasheet Preview

2N5345 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -280V(Min)
·High Switching Speed
·High Current-Gain Bandwidth Product-
: fT= 60MHz(Min)@ IC= -0.1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-280
V
VCEO
Collector-Emitter Voltage
-280
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.0
A
IB
Base Current-Continuous
-0.5
A
PD
Total Power Dissipation@TC=25
40
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.38 /W
2N5345
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N5345 Datasheet Preview

2N5345 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2N5345
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.2A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -250V; IE= 0
VCE= -225V; VBE(off)= -1.5V
VCE= -225V; VBE(off)= -1.5V,TC= 150
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
MIN MAX UNIT
-280
V
-3.0
V
-1.5
V
-0.1
mA
-0.1
-1.0
mA
-0.1
mA
25
150
7
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N5345
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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