Datasheet Details
| Part number | 2N5469 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.77 KB |
| Description | NPN Transistor |
| Datasheet | 2N5469-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N5469 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.77 KB |
| Description | NPN Transistor |
| Datasheet | 2N5469-INCHANGE.pdf |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular TO-66 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 700 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V Collector Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 70 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 2N5469 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA;
IB= 0 ICBO Collector Cutoff Current VCB=700V;IB= 0 IEBO Emitter Cutoff Current VEB=5V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5469 | Bipolar NPN Device | Seme LAB |
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2N5469 | Silicon NPN Power Transistors | SavantIC |
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