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2N5885 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain- : hFE= 20- @IC= 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W 2N5885 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 200mA ;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A;

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