2N6045G NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2N6045G
Manufacturer: INCHANGE
File Size: 195.23 KB
Datasheet: 2N6045G-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector

2N6045G Distributors

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2N6045G NPN Transistor INCHANGE

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