Download 2N6045G Datasheet PDF
Inchange Semiconductor
2N6045G
DESCRIPTION - High DC Current Gain- : h FE = 1000(Min)@ IC= 3A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A - plement to Type 2N6042 - G:Pb-Free package - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -65~150 UNIT V V V A A m A W ℃...