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2N6045G Datasheet Preview

2N6045G Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2N6045G
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 3A
·Complement to Type 2N6042
·GPb-Free package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
ICM
Collector Current-Peak
16
IB
Base Current-DC
120
PC
Collector Power Dissipation
TC=25
75
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6045G Datasheet Preview

2N6045G Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2N6045G
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A, IB= 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 8A, IB= 80mA
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A, IB= 80mA
4.5
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
2.8
V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
0.5
mA
ICEO
Collector Cutoff Current
VCE= 50V, IB= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 4V
1000
20000
hFE-2
DC Current Gain
IC= 8A; VCE= 4V
100
COB
Output Capacitance
IE= 0; VCB= 10V,f= 0.1MHz
300
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6045G
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2N6045G Datasheet PDF





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