Datasheet Summary
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 3A
- plement to Type 2N6042
- G：Pb-Free package
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching...
