Datasheet4U Logo Datasheet4U.com

2N6045G - NPN Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A Complement to Type 2N6042 G：Pb-Free package Minimum Lot-to-Lot variations for robust de

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6045 COMPLEMENTARY SILICON POWER TRANSISTORS ON Semiconductor
2N6045 Silicon NPN Power Transistors SavantIC
2N6045 COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
2N6045 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Central Semiconductor
2N6040 COMPLEMENTARY SILICON POWER TRANSISTORS ON Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2N60 TO-251 N-Channel MOSFET
2N6032 Silicon NPN Power Transistor
2N6033 Silicon NPN Power Transistor
2N6036 PNP Transistor
2N6054 PNP Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Complement to Type 2N6042 ·G：Pb-Free package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
Published: |