2N6045 Overview
Description
The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 SYMBOL TEST CONDITIONS ICBO ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE VCB=Rated VCBO VCE=Rated VCEO, VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100mA (2N6040, 2N6043) IC=100mA (2N6041, 2N6044) IC=100mA (2N6042, 2N6045) IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12mA (2N6042, 2N6045) IC=8.0A, IB=80mA IC=8.0A, IB=80mA VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) VCE=4.0V, IC=3.0A (2N6042, 2N6045) VCE=4.0V, IC=8.0A MIN 60 80 100 1,000 1,000 100 MAX 20 20 200 20 2.0 2.0 2.0 4.0 4.5 2.8 20,000 20,000 UNITS V V V A A mA W °C °C/W UNITS µA µA µA µA mA V V V V V V V V R1 (16-November 2009) 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hfe VCE=4.0V, IC=3.0A, f=1.0kHz 300 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN Types) Cob VCB=10V, IE=0, f=100kHz (PNP Types) 200 300 TO-220 CASE - MECHANICAL OUTLINE UNITS.
