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2N6045G - NPN Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A Complement to Type 2N6042 G：Pb-Free package Minimum Lot-to-Lot variations for robust de

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Complement to Type 2N6042 ·G：Pb-Free package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.