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INCHANGE

2N6054 Datasheet Preview

2N6054 Datasheet

PNP Transistor

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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2N6054
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·Low Collector-Emitter Saturation Voltage
: VCE(sat) = -2.0V(Max)@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
·Complement to type 2N6056
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-8
A
ICM
Collector Current-Peak
-16
A
IB
Base Current
-120
mA
PC
Collector Power Dissipation@TC=25100
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.75
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6054 Datasheet Preview

2N6054 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Darlingtion Power Transistor
2N6054
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
-80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
-3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A; IB= -80mA
4.0
V
VBE(on) Base-Emitter On voltage
IC= -4A ; VCE= -3V
-2.8
V
ICEO
Collector Cutoff current
ICEX
Collector Cutoff current
IEBO
Emitter Cut-off current
VCE= -40V; IB=0
VCE= -80V;VBE(off)= -1.5V
VCE= -80V;VBE(off)= -1.5V,TC=150
VEB= -5V; IC= 0
-0.5
mA
-0.5
-5.0
mA
-2.0
mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -3V
750 18000
hFE-2
DC Current Gain
IC= -8A ; VCE= -3V
100
COB
Output Capacitance
IE=0 ; VCB= -10V; ftest= 0.1MHz
350
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6054
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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2N6054 Datasheet PDF





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