Datasheet Summary
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- Low Collector-Emitter Saturation Voltage
: VCE(sat) = -2.0V(Max)@ IC= -4A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
- plement to type 2N6056
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching...
