Datasheet Details
| Part number | 2N6102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.04 KB |
| Description | NPN Transistor |
| Datasheet | 2N6102-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2N6102.
| Part number | 2N6102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.04 KB |
| Description | NPN Transistor |
| Datasheet | 2N6102-INCHANGE.pdf |
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·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VCER Collector-Emitter Voltage RBE= 100Ω 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 16A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6102 | Power Transistors | RCA |
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2N6102 | Silicon Power Transistor | SavantIC |
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