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2N6110 Datasheet Preview

2N6110 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6110
DESCRIPTION
·DC Current Gain-
: hFE = 30-150@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -30V(Min)
··Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier and switching
circuits applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-3
A
40
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.125 /W
isc websitewww.iscsemi.com
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INCHANGE

2N6110 Datasheet Preview

2N6110 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2N6110
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -7A ; VCE= -4V
VCE= -40V; VBE(off)= -1.5V
VCE= -30V; VBE(off)= -1.5V; TC= 150
VCE= -20V;IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A ; VCE= -4V
hFE-2
DC Current Gain
IC= -7A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -4V; ftest= 1MHz
MIN MAX UNIT
-30
V
-3.5
V
-3.0
V
-0.1
-2.0
mA
-1.0 mA
-1.0 mA
30
150
2.3
250
pF
10
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6110
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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