DC Current Gain-
: hFE = 30-150@ IC= 2A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE
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isc Silicon NPN Power Transistor
2N6293
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
The
2N6293 Datasheet
