2N6322 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applicati

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2N6322 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N6322
Manufacturer	Inchange Semiconductor
File Size	179.62 KB
Description	NPN Transistor
Datasheet	2N6322 Datasheet

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isc Silicon NPN Power Transistor 2N6322 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and high-speed switching applications.