2N6348 Datasheet | Inchange Semiconductor

DESCRIPTION - With TO-220 packaging - High operating junction temperature - Very high mutation performancemaximized at each gate sensitivity - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High temperature, high power motor control - Solid state relays;heating and cooking appliances - Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) Repetitive peak reverse voltage RMS on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Tj Tstg Average gate power dissipation ( over any 20 ms period ) Operating junction temperature Storage temperature UNIT -40~125 ℃ -40~150 ℃ isc website：.iscsemi. isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage Gate-trigger current VGT Gate-trigger voltage IT=11A,t...