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2N6343 Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors.

General Description

·With TO-220 packaging ·High operating junction temperature ·Very high commutation performance maximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Tj Tstg Average gate power dissipation ( over any 20 ms period ) Operating junction temperature Storage temperature 2N6343 MIN UNIT 400 V 400 V 8 A 100 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;

Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=100℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=11A,tP=380μs Ⅰ VD =12V;RL=100Ω Ⅱ Ⅲ VD =12V;RL=100Ω MIN MAX UNIT 0.01 2 mA 1.55 V 50 50 mA 50 2.0 V Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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