Inchange Semiconductor 2N6348
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●With TO-220 packaging●High operating junction temperature
●Very high commutation performancemaximized at each gate sensitivity
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High temperature, high power motor control●Solid state relays;heating and cooking appliances
●Switching applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) Repetitive peak reverse voltage RMS on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Tj Tstg Average gate power dissipation ( over any 20 ms period ) Operating junction temperature Storage temperature MIN UNIT 600 V 600 V 8 A 100 A 0.5 W -40~125 ℃ -40~150 ℃ isc website: isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor 2N6348ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM R...