Datasheet Details
| Part number | 2N6348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.30 KB |
| Description | Thyristor |
| Datasheet | 2N6348-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor 2N6348.
| Part number | 2N6348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.30 KB |
| Description | Thyristor |
| Datasheet | 2N6348-INCHANGE.pdf |
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·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) Repetitive peak reverse voltage RMS on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Tj Tstg Average gate power dissipation ( over any 20 ms period ) Operating junction temperature Storage temperature MIN UNIT 600 V 600 V 8 A 100 A 0.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor 2N6348 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=11A,tP=380μs Ⅰ VD =12V;RL=100Ω Ⅱ Ⅲ Ⅳ VD =12V;RL=100Ω MIN MAX UNIT 0.01 2 mA 1.55 V 50 75 50 mA 75 2.5 V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6348 | TRIACS Silicon Bidirectional Triode Thyristors | Motorola Inc |
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2N6348A | Triacs Silicon Bidirectional Thyristors | ON Semiconductor |
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