High DC current gain
: hFE= 500(Min)@ IC= 4A
With TO-3 package
Low collector saturation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general-purpose power amplifier and
low -frequency
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC current gain
: hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and
low -frequency swithing applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
20
A
IB
Base Current-Continuous
0.
2N6355 Datasheet
