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2N6492 - NPN Transistor

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Datasheet Details

Part number 2N6492
Manufacturer INCHANGE
File Size 183.30 KB
Description NPN Transistor
Datasheet download datasheet 2N6492-INCHANGE.pdf

2N6492 Product details

Description

High DC current gain : hFE= 500(Min)@ IC= 3A With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low frequency swithing applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 7 V I

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