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2N6499 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Download the 2N6499 datasheet PDF. This datasheet also includes the 2N6497 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N6497-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2N6497 350 VCBO Collector-Base Voltage 2N6498 400 V 2N6499 450 2N6497 250 VCEO Collector-Emitter Voltage 2N6498 300 V 2N6499 350 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current PD Total Power Dissipation@TC=25℃ Tj Junction Temperature Tstg Storage Temperature 2 A 80 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Rresistance,Junction to Case MAX UNIT 1.56 ℃/W isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N6497/6498/6499 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6497 250 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6498 IC= 25mA;

IB= 0 300 2N6499 350 Collector-Emitter VCE(sat)-1 Saturation Voltage 2N6497 2N6498 2N6499 IC= 2.5A;

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product.