2N6560 Overview
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA ICBO Collector-Base Cutoff Current VCB= 450V IEBO Emitter-Base Cutoff Current VEB= 5V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A hFE-1 DC Current Gain IC= 5A;.
