Datasheet Details
| Part number | 2N6561 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N6561 Datasheet
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| Part number | 2N6561 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.88 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N6561 Datasheet
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·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 220 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6561 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA ICBO Collector-Base Cutoff Current VCB= 300V IEBO Emitter-Base Cutoff Current VEB= 5V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
IB= 2A hFE-1 DC Current Gain IC=10A;
VCE= 2V 2N6561 MIN TYP.
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6561 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
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