900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2N6561 Datasheet Preview

2N6561 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min)
·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PD
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
10
A
220
W
200
Tstg
Storage Temperature Range
-65~200
2N6561
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6561 Datasheet Preview

2N6561 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA
ICBO
Collector-Base Cutoff Current
VCB= 300V
IEBO
Emitter-Base Cutoff Current
VEB= 5V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
hFE-1
DC Current Gain
IC=10A; VCE= 2V
2N6561
MIN TYP. MAX UNIT
300
V
1
mA
1
mA
0.75 V
10
50
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6561
Description Silicon NPN Power Transistor
Maker INCHANGE
PDF Download

2N6561 Datasheet PDF






Similar Datasheet

1 2N656 NPN Transistor
Motorola
2 2N656 BJT
New Jersey Semiconductor
3 2N6560 Bipolar NPN Device
Seme LAB
4 2N6560 Silicon NPN Power Transistor
INCHANGE
5 2N6561 Bipolar NPN Device
Seme LAB
6 2N6561 Silicon NPN Power Transistor
INCHANGE
7 2N6562 NPN Transistor
SSDI
8 2N6563 NPN Transistor
SSDI
9 2N6564 Thyristor SCR 400V 20A 3-Pin TO-92 Bulk
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy