Datasheet Details
| Part number | 2N6560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6560-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.92 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6560-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : VCEO=450V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 220 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6560 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA ICBO Collector-Base Cutoff Current VCB= 450V IEBO Emitter-Base Cutoff Current VEB= 5V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
IB= 1A hFE-1 DC Current Gain IC= 5A;
VCE= 2V 2N6560 MIN TYP.
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