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2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
• High Collector·Emitter Breakdown Voltage -
BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
• High Emitter-Base Breakdown Voltage -
BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde
NPN SILICON ANNULAR TRAN~STORS
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC
Derate above 2SoC Total Device Dissipation @ Teo:: 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCB VEB
PD
PD
TJ,Tstg
2N656 2N657
60
100
60
100
8.0
1.0 5.7
4.0 22.
2N656 Datasheet
