2N656
2N656 is NPN Transistor manufactured by Motorola Semiconductor.
2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
- High Collector- Emitter Breakdown Voltage
- BVCEO = 100 Vde (Min) @ IC = 250 !lAde
- 2N657
- High Emitter-Base Breakdown Voltage
- BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde
NPN SILICON ANNULAR TRAN~STORS
- MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A
- 2SoC
Derate above 2SoC Total Device Dissipation @ Teo:: 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCB VEB
TJ,Tstg
2N656...
