2N656 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N656 |
|---|---|
| Datasheet | 2N656-Motorola.pdf |
| File Size | 58.33 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN Transistor |
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2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS MAXIMUM RATINGS Rating Collector-Emitter Voltage...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6560 | Bipolar NPN Device | Seme LAB |
 |
2N6560 | Silicon NPN Power Transistor | INCHANGE |
|
2N6561 | Bipolar NPN Device | Seme LAB |
|
2N6561 | Silicon NPN Power Transistor | INCHANGE |
 |
2N6562 | NPN Transistor | SSDI |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N650 | PNP Transistor |
| 2N6504 | SILICON CONTROLLED RECTIFIERS |
| 2N6505 | SILICON CONTROLLED RECTIFIERS |
| 2N6506 | SILICON CONTROLLED RECTIFIERS |
| 2N6507 | SILICON CONTROLLED RECTIFIERS |
| 2N6508 | SILICON CONTROLLED RECTIFIERS |
| 2N6509 | SILICON CONTROLLED RECTIFIERS |
| 2N650A | PNP Transistor |
| 2N651 | PNP Transistor |
| 2N6515 | High Voltage Transistors |
