2N657 datasheet by Motorola Semiconductor (now NXP Semiconductors).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N657 |
|---|---|
| Datasheet | 2N657 2N656 Datasheet (PDF) |
| File Size | 58.33 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN Transistor |
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2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS MAXIMUM RATINGS Rating Collector-Emitter Voltage...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N657 | NPN SILICON PLANAR TRANSISTOR | CDIL |
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2N6573 | Nipolar NPN Device | Semelab Plc |
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2N6573 | NPN Transistor | INCHANGE |
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2N6574 | Bipolar NPN Device | Seme LAB |
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2N6574 | Silicon NPN Power Transistor | Inchange Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N6576 | NPN SILICON POWER DARLINGTON TRANSISTOR |
| 2N6577 | NPN SILICON POWER DARLINGTON TRANSISTOR |
| 2N6578 | NPN SILICON POWER DARLINGTON TRANSISTOR |
| 2N650 | PNP Transistor |
| 2N6504 | SILICON CONTROLLED RECTIFIERS |
| 2N6505 | SILICON CONTROLLED RECTIFIERS |
| 2N6506 | SILICON CONTROLLED RECTIFIERS |
| 2N6507 | SILICON CONTROLLED RECTIFIERS |
| 2N6508 | SILICON CONTROLLED RECTIFIERS |
| 2N6509 | SILICON CONTROLLED RECTIFIERS |
