MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC Derate above 2SoC Total Device Dissipation @ Teo:: 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB PD PD TJ,Tstg 2N656 2N657 60 100 60 100 8.0 1.0 5.7 4.0 22.B -65 to +200 Unit Vde Vde Vde Watt mW/oC Watts mW/oC °c *ElECTR ICAl CHARACTER ISTICS (TA = 25°C unless otherwise noted 1 Characteristic Symbol Min Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCEO lie = 250~Ade, IB = 01 2N656 60 - 2N657 100 - Collector-Base Breakdown Voltage BVCBO (lC = 100~Ade, IE = 01 2N656 2N657 60 - 100 - Emitter-Base Breakdown Voltage liE = 250~Ade, IC = 01 BVEBO B.O - Collector Cutoff Current (VCB = 30 Vde, IE = 01 ICBO - 10 ON CHARACTERISTICS DC Current Gain(1) (lC = 200 mAde, VCE = 10 Vdel Collector-Emitter Saturation Voltage(1) lic = 200 mAde, IB = 40 mAdel hFE 30 90 VCE(satl - 4.0 SMALL●SIGNAL CHARACTERISTICS Input...
Motorola