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2N657 - NPN Transistor

Download the 2N657 datasheet PDF. This datasheet also covers the 2N656 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N656-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6576 NPN SILICON POWER DARLINGTON TRANSISTOR
2N6577 NPN SILICON POWER DARLINGTON TRANSISTOR
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2N650 PNP Transistor
2N6504 SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. • High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 • High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC Derate above 2SoC Total Device Dissipation @ Teo:: 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB PD PD TJ,Tstg 2N656 2N657 60 100 60 100 8.0 1.0 5.7 4.0 22.