| Part number | 2N6561 |
|---|---|
| Datasheet | 2N6561-INCHANGE.pdf |
| File Size | 213.88 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA ICBO Collector-Base Cutoff Current VCB= 300V IEBO Emitter-Base Cutoff Current VEB= 5V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A hFE-1 DC Current Gain IC=10A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6561 | Bipolar NPN Device | Seme LAB |
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