| Part Number | 2N6561 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS. IB= 2A hFE-1 DC Current Gain IC=10A; VCE= 2V 2N6561 MIN TYP. MAX UNIT 300 V 1 mA 1 mA 0.75 V 10 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th. |
2N6561 Datasheet and Specifications PDF
The 2N6561 is a Silicon NPN Power Transistor.
Key Specifications
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| Part Number | 2N6561 Datasheet |
|---|---|
| Description | Bipolar NPN Device |
| Manufacturer | Seme LAB |
| Overview | 2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.. . |