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2N6740 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in indu

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 650 V VCEX Collector-Emitter Voltage-VBE= -1.