2N6932 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies，switching regulator and gene

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2N6932 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N6932
Manufacturer	Inchange Semiconductor
File Size	182.59 KB
Description	NPN Transistor
Datasheet	2N6932 Datasheet

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Part Number	Description
2N6931	NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.