2RI250E-080 - Diode

Inchange Semiconductor

Key Features

Large Capacitance.
Insulated Type.
Easy Connection.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

2RI250E-080 diode by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2RI250E-080
Manufacturer	Inchange Semiconductor
File Size	243.46 KB
Description	Diode
Datasheet	2RI250E-080 Datasheet

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FEATURES ·Large Capacitance ·Insulated Type ·Easy Connection ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverters ·Battery Chargers ·Switching power supply 2RI250E-080 Diode Module ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IFSM Surge Forward Current Viso Isolation Voltage TJ Junction Temperature Tstg Storage Temperature Range CONDITIONS IR=100µA TC=90℃ VALUE UNIT 800 V 250*2 A 5000 A 2500 V -40~150 ℃ -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.1 UNIT ℃/W isc website：www.iscsemi.