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2SA1006B - PNP Transistor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) Wide Area of Safe Operation Complement to Type 2SC2336B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplif

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.