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INCHANGE

2SA1006B Datasheet Preview

2SA1006B Datasheet

PNP Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1006B
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -250Vdc (Min)
·Wide Area of Safe Operation
·Complement to Type 2SC2336B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
Collector Power Dissipation@ Ta=251.5
PC
W
Total Power Dissipation@ TC=25
25
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA1006B Datasheet Preview

2SA1006B Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1006B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
-1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -3.0V; IC=0
-1.0 μA
hFE-1
DC Current Gain
IC= -5mA ; VCE= -5V
30
hFE-2
DC Current Gain
IC= -150mA ; VCE= -5V
60
320
fT
Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V
80
MHz
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
45
pF
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1006B
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA1006B Datasheet PDF





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