isc Silicon PNP Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA ; IB= -50mA
ICBO
Emitter Cutoff Current
VCB= -150V; IE= 0
IEBO
Collector Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -200mA ; VCE= -5V
hFE Classifications
R
O
60-120 100-200
2SA1013
MIN TYP. MAX UNIT
-1.5 V
-1.0 μA
-1.0 μA
60
200
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
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